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TPH3R70APL

Toshiba

Silicon N-channel MOSFET


TPH3R70APL
TPH3R70APL

PDF File TPH3R70APL PDF File


Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH3R70APL 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.
) (3) Small output charge: Qoss = 74 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 3.
1 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TPH3R70APL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-10 2017-10-01 Rev.
3.
0 TPH3R70APL 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1) ID 90 A Drain current (DC) (Silicon limit) (Note 1), (...



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