P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
AiT Semiconductor Inc.
www.
ait-ic.
com
AM3415A
MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM3415A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as1.
8V.
This
device is suitable for use as a load switch or in PWM
applications .
It is ESD protested.
The AM3415A is available in SOT-23 package.
VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.
5V RDS(ON) < 47mΩ @ VGS=-4.
5V ESD Rating: 2500V HBM High Power and current handing capability Lead free product is acquired Surface mount package Available in SOT-23 Package
ORDERING INFORMATION
APPLICATION
Package Type
Part Number
SOT-23
AM3415AE3R E3
AM3415AE3VR
Note
V: Halogen free Package R: Tape & Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
PWM application Load switch
TYPICAL APPLICATION
Schematic diagram
REV1.
0
- JAN 2014 RELEASED -
-1-
AiT Semiconductor Inc.
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