~o~~LF
FIELD EFFECT POWER TRANSISTOR
IRF~250,251
D88FN2!M2
30 AMPERES 200, 150 VOLTS
ROS(ON) =0.085 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switchin...