FIELD EFFECT POWER TRANSISTOR
Description
~D~~ IRFF210,211
FIELD EFFECT POWER TRANSISTOR
2.
2 AMPERES 200, 150 VOLTS
ROS(ON) =1.
5 il
Preliminary
This series of N-Channel Enhancement-mode' Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
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CASE STYLE TO-20SAF (...
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