Dual N- and P-Channel FET
Description
Si4532DY
September 1999
Si4532DY*
Dual N- and P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
N-Channel 3.
9A, 30V.
RDS(ON) = 0.
065Ω @VGS = 10V
RDS(ON) = 0.
095Ω @VGS = 4.
5V.
P-Channel -3.
5A,-30V.
RDS(ON)= 0.
085Ω @VGS = -10V
RDS(ON)= 0.
190 Ω @VGS = -4.
5V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual (N & P-Channel) MOSF...
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