Schottky Barrier Diode - Toshiba
Description
Schottky Barrier Diode Silicon Epitaxial
CUS10S30
1.
Applications
• High-Speed Switching
2.
Packaging and Internal Circuit
CUS10S30
1: Cathode 2: Anode
USC
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.
0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derati...
Similar Datasheet
