P-Channel Enhancement Mode MOSFET
Description
SSC8K21GN3
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
P-MOSFET VDS VGS
-20V ±8V
Schottky VR IR 20V 35uA
RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8
VF TYP 410Mv@0.
5A
ID -2A
IO 1A
Applications
Li Battery Charging High Side DC/DC Converter High Side Driver for Brushless DC Motor
Power Management in Portable, Battery
Powered Devices
Pin configuration
Top View
8765 KKDD
General Description
SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode.
the tiny and thin outline saves PCB consumption.
Package Information
KD
AASG 12 3 4
SSC-1V0
Package：DFN3x2 http://www.
afsemi.
com
1/5
Analog Future
SSC8K21GN3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage Gate-Source Voltage
VDS -20 VGS ±8
V
Drain Current (Note 1)
Continuous Pulsed
-2...
Similar Datasheet
