N-Channel Enhancement Mode MOSFET - AFSEMI
Description
SSC2314GS6A
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP 22mR@4V5
ID
Applications
Load Switch
Portable Devices DCDC Conversion
20V ±8V
25mR@2V5 32mR@1V8
5A
Pin configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance.
This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package.
Excellent thermal and
electrical capabilities.
Package Information
SSC-V1.
0
http://www.
afsemi.
com
1/4
Analog Future
SSC2314GS6A
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
Symbol VDSS ...
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