P-Channel Enhancement Mode MOSFET - Alfa-MOS
Description
Alfa-MOS
Technology
General Description
AFP2337S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23-3L )
AFP2337S
100V P-Channel Enhancement Mode MOSFET
Features
z -100V/-3.
8A,RDS(ON)= 200mΩ@VGS= -10V z -100V/-2.
6A,RDS(ON)= 210mΩ@VGS= -4.
5V z Super high density cell design for extremely
low RDS (ON) z SOT-23-3L package design
Application
z Active Clamp Circuits in DC/DC Power Supplies
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2337SS23RG
37SYW
SOT-23-3L
※ 37S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
※ AFP2337SS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free
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