N-Channel MOSFET
Description
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS
SI2300 N-Channel Enhancement MOSFET
Features
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.2
+0.21.1 -0.1
+0.21.6 -0.1
0.55 0...
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