N-Channel MOSFET - CCSemi
Description
MOSFET
N-Channel Enhancement Mode Field Effect Transistor
SI2300
Features
◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.
5V,ID=5.
0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.
5V,ID=4.
0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.
8V,ID=1.
0A
Absolute Maximum Ratings Ta=25℃
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃
-Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec.
Symbol VDS VGS ID IDM PD RthJA Tj.
Tstg
Rating 20 ±10 3.
8 15 1.
25 100
-55 to 150
Unit V V A A W
℃/W ℃
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Revision 2016/8/15 @2016-2017 CCSemi .
MOSFET
Electrical Characteristics Ta=25℃
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage
VDSS VGS=0V,ID=250uA
Zero Gate Voltage Drain Current
IDSS VDS=20V,VGS=0V
Gate-Body Leakage
IGSS VGS=±10V,VDS=0V
Gate Threshold Voltage*
VGS(th) VGS=VDS,ID=250uA
VGS=4.
5V,ID=5.
0A
Drain-Source On-state Resistance* RDS(ON) VGS=2...
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