Silicon varactor diode
Description
1N4388 (SILICON)
(MV1806)
CASE 44
(00·4)
Silicon varactor diode for high-frequency harmonic generation applications.
cathode connected to stud
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
RF Power Input
Total Device Dissipation @ TC = 75°C Derate above 75° C
Operating and Storage Junction Temperature Range
Symbol
VR IF P.
m PD
T J , T stg
Value
100
1.
0 25
10 0.
10
Unit
Vdc
Amp
Watts
Watts W;OC
-65 to +175
°c
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10 !lAdc)
Reverse Current (VR =75Vde) (VR =75Vde, T A =150°C)
Diode Capacitance (VR = 6.
0 Vde, f =l.
OMHz) (VR =90Vde, f=l.
OMHz)
Series Resistance (VR = 6.
0 Vdc, f = 50 MHz)
Symbol
BVR IR
CT *
RS
Figure of Merit (VR = 10 Vdc, f = 50 MHz)
(VR = 90 Vdc, f = 50 MHz)
FUNCTIONAL TESTS
Power Output Efficiency
Doubler Circuit (Figure 1) Pin = 20 W, fin = 500 MHz,
fout = 1000 MHz
Q
Pout
1)
Min
100 -
-
-
200 1000
11.
0
55
Typ
150
0.
5
-
10 5.
0
1.
2
300
-
12...
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