Silicon NPN Transistor
Description
Transistors
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification Complementary to 2SA1123
5.
0±0.
2
Unit: mm 4.
0±0.
2
5.
1±0.
2
■ Features
• Satisfactory linearity of forward current transfer ratio hFE
• High collector-emitter voltage (Base open) VCEO
• Small collector output capacitance (Common base, input open cir-
0.
7±0.
1
cuited) Cob
0.
7±0.
2 12.
9±0.
5
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
150
V
n d ge.
ed Collector-emitter voltage (Base open) VCEO
150
2.
3±0.
2
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector current
IC
50
mA
life d, d Peak collector current
ICP
100
mA
n u duct type Collector power dissipation
PC
750
mW
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
0.
45+–00.
.
115 2.
5+–00.
.
26
2.
5+–00.
.
26
0.
45+–00.
.
115
1 23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
150
V
tinu nan Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
M is iscon ainte Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
1
µA
e/D e, m Forward current transfer ratio *
hFE VCE = 5 V, IC = 10 mA
130
330
D anc typ Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
1
V
inten ance Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
160
MHz
Ma ten Collector output capacitance ain (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
3
pF
(planed m Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT
150 300 mV
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 70...
Similar Datasheet
