Silicon NPN Transistor
Description
Transistors
2SC2206
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
Complementary to 2SA1254 ■ Features
(0.
4)
6.
9±0.
1 (1.
5)
(1.
5)
2.
5±0.
1 (1.
0)
(1.
0)
4.
5±0.
1
3.
5±0.
1
• Optimum for RF amplification of FM/AM radios
R 0.
9
• High transition frequency fT
R 0.
7
• M type package allowing easy automatic and manual insertion
as well as stand-alone fixing to the printed circuit board
4.
1±0.
2
/ ■ Absolute Maximum Ratings Ta = 25°C
1.
0±0.
1
2.
4±0.
2
(0.
85) 0.
55±0.
1
0.
45±0.
05
2.
0±0.
2
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
30
1.
25±0.
05
V
n d ge.
ed Collector-emitter voltage (Base open) VCEO
20
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector current
IC
30
mA
life d, d Peak collector current
ICP
60
mA
n u duct type Collector power dissipation
PC
400
mW
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
3
2
1
(2.
5) (2.
5)
1: Base 2: Collector 3: Emitter M-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
V
M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
/Dis ma Base-emitter voltage
VBE VCE = 10 V, IC = 1 mA
0.
7
V
D ance type, Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
220
ten ce Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
0.
1
V
Main tenan Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 300
MHz
ain Noise figure
NF VCB = 10 V, IE = −1 mA, f = 5 MHz
2.
8
4
dB
d m Common-emitter reverse transfer (plane capacitance
Cre VCB = 10 V, IE = −1 mA, f = 10.
7 MHz
1.
5
pF
Reverse transfer impedance
Zrb VCB = 10 V, IE =...
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