NPN Transistor
Description
7182N (SILICON)
2N1420
NPN silicon annular Star transistors for mediumcurrent switching and amplifier applications.
2N718 2N1420
CASE 22
(TO-IS)
CASE 31
(TO-5)
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage 2N718 2N1420
Symbol VCB VCER
Value 60
40 30
Unit
Vdc Vdc
Emitter-Base Voltage
VEB
5.
0 Vdc
Total Device Dissipation at 250 C Case Temperature
Derating Factor Above 250 C
Total Device Dissipation at 25 0 C Ambient Temperatures
Derating Factor Above 250 C
Junction Temperature
Storage Temperature range
PD
PD TJ Tstg
2N1420 TO-5
2N71S TO-IS
3.
0 1.
5 20 10
0.
6 0.
4 4.
0 2.
66
+ 175
-65 to + 200
Watts mW/oC
watts mW/oC °c
°c
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Collector Cutoff Current
(Vce = 30 Vdc, IE = 0) (Vca = 30 Vdc, IE = 0, TA = 150°C)
Collector- Base Breakdown Voltage
(Ic = 100 !LAdc, IE = 0)
Collector- Emitter Breakdown Voltage
(IC = 100 mAdc, pulsed; Re;; 10 Ohms)
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