NPN Transistor
Description
2N702 (SILICON) 2N703
CASE 22
(TO·18)
NPN silicon annular transistors designed for lowlevel, high-speed switching applications.
MAXIMUM RATINGS (T.
" 25'C unless otherwise noted)
Rating
Collector·Emitter Voltage
Collector·aase Voltage
Emitter·aase Voltage
Collector Current
Total Device Dissipation @TA = 25' C Derate above 25' C
Total Device Dissipation @TC = 25' C Derate above 25' C
Operating and Storage Junction Tem~_erature Range
Symbol Value Unit
VCEO
25
Vdc
Vca 25 Vdc
YEa
5.
0
Vdc
IC 50 mAdc
PD PD Tstg
300 roW 2.
0 mW/'C 600 mW 4.
0 mW/'C .
65 to .
.
.
175 'c
ELECTRICAL CHARACTERISTICS (T.
" 25'C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter areakdown Voltage
(IC =2.
0 mAde, la =0)
Collector-a1/-.
.
Breakdown Voltage (IC = 5.
0 I'Adc, IE = 0)
Emitter·aase areakdown Voltage
(IE = 10 I'Adc, IC =0)
Collector Cut911 Current
=(VCE 20 Vde, IB = 0)
Collector .
Cutoll Current
(VCB =10 Vdc, ~ =0) ==(VCB = 10 Vde, IE 0, TA +150'C)
avCEO avCOO...
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