NPN Transistor
Description
2N696 (SILICON) 2N697
CASE 31
(TO-5)
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCB 60
Vdc
Emitter-Base Voltage
VEB
5.
0
Vdc
Total Device Dissipation @ TA = 25°C Derate above 25°C
PD
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
Operating and Storage Junction Temperature Range
TJ' Tstg
0.
6 13.
3 2.
0 13.
3 -65 to +200
watt mWrC Watts mWrC °c
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.
)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage" (Ic = 100 mAdc, RBE = 10 ohms)
Symbol Min Max Unit
BVCER"
40
Vdc
Collector-Base Breakdown Voltage (IC = 100 j.
tAdc, IE = 0)
BVCBO
60
Vdc
Emitter-Base Breakdown Voltage (~ = 100 !.
LAdc, IC = 0)
BVEBO
5.
0
Vdc
Collector Cutoff Current (VCB = 30 Vdc, ~ = 0)
(VCB= 30 Vdc, IE = 0, TA = 1500 C)
ICBO
-...
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