PNP Transistor
Description
76 A2N3
(GERMANIUM)
For Spe~ifications, See 2N350A Data.
2N378 thru 2N380(GERlt\ANIUM)
2N459,A
C(A10S-3)E1 l~l~.
.
.
·
PNP germanium power transistors for general purpose power amplifier and sWitching applications.
MAXIMUM RATINGS
Rating
Symbol 2N378 2N379 2N380 2N459 2N459A Unit
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
(VBE = 1.
5 V) (VBE = 1.
0 V)
VCEX
Collector.
.
Einitter Voltage
VCES
Collector-Base VOltage
VCB
-Emitter-Base Voltage
Collector Current.
VEB IC
Operating Junction Temperature Range
Total Device Dissipation @TC = 25° C
TJ PD
20
40
-
40 30 60 60 Vdc
Vdc
80 60
--
- - 105 105
- - 70 70 Vdc
- - - 105 Vdc
- - 10 25 Vdc
5.
0 Adc
-65 to +110
°c
106 Watts
ELECTRICAL CHAR~CTERISTICS (TA':' 25°C unless otherwise notedl
Characteristic
OFF CHARACTERISTICS collector-Emitter Breakdown Voltage (IC =100mAdc)
Collector Cutoff Current (VCE =40 Vde, VBE(off)= 1.
5 Vdc) (VCE = 60 Vde, VBE(off) = 1.
5 Vde) (VCE =80 Vde, VBE(off) = 1.
-5 Vde) (VC...
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