NPN Transistor
Description
2N2242 (SILICON)
CASE 22
(TO·1S)
NPN silicon annular transistors designed for highspeed, low-power saturated switching applications.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Total Device Dissipation @' TA -= 25° C
Derate above 25° C Junction Temperature - Operating Storage Temperature Range
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
5.
0k
5.
0 k
Symbol
Value
Unit
VCEO VCB VEB IC PD
T.
T Tstg
15 40 5.
0 225 360 2.
0 -65 to +200 -65 to +200
+ 3.
0 v (Vee)
Vdc
Vdc
Vdc
mAdc
mWatts mW/oC
°c °c
30
;
-
240 -.
JV\
I'
v--
.
0.
1 I1_F
_.
.
.
.
u----1.
.
---O
seOPE
z ~ 100 k
PULSE WIDTH 96 ns 51
PRR 120 Hz
t .
.
.
Q!!.
VBB = -4.
0 V V in = +21 V
V BB = +17 V Vin = -20 V
+11 V
FIGURE 2 - STORAGE TIME TEST CIRCUIT
500 O.
1 JlF 500
-IOU 62
PULSE WIDTH 96 ns
PRR 120 Hz
1.
0k
+10 V 91
,.
.
.
8.
9-0v~-~O.
~1-J~lF-oseOPE
z ~ 100 k
1.
0k
2-264
2N2242 (continued)
ELECTRICAL CHARACTERISTICS (1, = 25'C unl.
ss ot...
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