NPN silicon RF Power transistors
Description
2N3375(SILlCON)\ 2N3553
2N3632 2N 3961
•CASE 79
(10·39)
2N3553
·'·CASE 24
(10·102)
2N3961
* Collector Connected
"·CASE 36
(10·60)
to Case .
.
Collector electrically connected
to case; stud electrically
2N3375
isolated from case
2N3632
*•• Stud electrically
Isolated from case
NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas.
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Collector Current
IC
Total Device Dissipation @ TC =25·C
Derate above 25·C
PD
Operating and Storage Junction Temperature Range
TJ , Tstg
2N3375 2N3553 2N3632 2N3961
.
.
40 •
.
.
.
.
65
.
.
.
.
4.
0
Unit
Vdc Vdc Vdc
1.
5 1.
0 3.
0 1.
0 Adc
11.
6
.
.
66.
4
7.
0 23 40 131 -65 to +200
10
57.
2
•
Watts mW;oC
·C
=ELECTRICAL CHARACTERISTICS (TA 25'C unless otherwise noted)
Characteristic
OFF CHA...
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