Power-Transistor
Description
IPA60R360P7
MOSFET
600VCoolMOSªP7PowerDevice
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.
The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.
It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.
g.
verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness •Significantreductionofswitchingandconductionlosses •ExcellentESDrobustness>2kV(HBM)forallproducts •BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²)
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages •Simplifiedthermalmanagementduetolowswitchingandconduction losses •Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection •Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.
g.
PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
360
mΩ
Qg,typ
13
nC
ID,pulse
26
A
Eoss @ 400V
1.
6
µJ
Body diode diF/dt
900
A/µs
Type/OrderingCode IPA60R360P7
Final D...
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