Schottky Barrier Diode - Toshiba
Description
Schottky Barrier Diode Silicon Epitaxial
CUS15S30
1.
Applications
• High-Speed Switching
2.
Features
(1) Low forward voltage: VF(1) = 0.
33 V (typ.
)
3.
Packaging and Internal Circuit
USC
CUS15S30
1: Cathode 2: Anode
Start of commercial production
2012-10
1 2014-04-07 Rev.
3.
0
CUS15S30
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.
5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please d...
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