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2SA816

Part Number	2SA816
Manufacturer	Toshiba
Description	SILICON PNP EPITAXIAL TYPE TRANSISTOR
Published	Jul 17, 2018
Detailed Description	: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS FE...
Datasheet	2SA816 PDF File

Overview

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES • High Breakdown Voltage : .
Complementary to 2SC1626, V CEO =-80V 10.
3 MAX.
Unit in mm 03.
6 ±0.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collector Current Emitter Current Collector Power Dissipation (Ta=25°C) Junction Temperature Storage Temperature Range T stg RATING -80 -80 -5 -750 750 1.
5 150 -55^ 150 UNIT V mA mA °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) i.
BASE 2.
COLLECTOR (HEAT SINK; 3.
EMITTER TO-220AB TOSHIBA 2— IOAIA Mounting Kit No.
AC75 We...

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