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2SB1017

Part Number	2SB1017
Manufacturer	Toshiba
Description	SILICON PNP TRANSISTOR
Published	Jul 17, 2018
Detailed Description	: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1017 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Good Linearity of hpE...
Datasheet	2SB1017 PDF File

Overview

: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1017 POWER AMPLIFIER APPLICATIONS.
Unit in mm FEATURES .
Good Linearity of hpE .
Complementary to 2SD1408 .
Recommended for 20 ~ 25W High-Fiderity i\udio Frequency Amplifier Output Stage.
10.
3 MAX.
7.
(D 03.
2±4 + 0.
25 1 r 0.
76-0.
15 1 1.
2 " is H 5 Til H ^ MAXIMUM RATINGS (Ta=25°C) 2.
54±0.
25_ 2.
54±0.
25 • CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC T j Tstg RATING -80 -80 -5 -4 -0.
4 25 150 -55-150 UNIT V...

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