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2SB996

Toshiba
Part Number 2SB996
Manufacturer Toshiba
Published Jul 17, 2018
Description SILICON PNP TRANSISTOR
Detailed Description : 2SB996 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER
Datasheet PDF File 2SB996 PDF File

2SB996
2SB996



Overview
: 2SB996 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS.
FEATURES .
Good Linearity of hpg .
Complementary to 2SD1356 .
Recommended for 20-25W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm 0&2xO.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC Tstg RATING -80 -80 -5 -4 -0.
4 30 150 -55~150 UNIT JEDEC 1.
BASE 2.
COLLECTOR (HEAT SINK) a EMITTER TOSHIBA 2-10K1A Weight : 2.
0g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICBO lEBO VCB=-80V, I E=0 VEB=-5V, I C=0 V(BR)CE0 IC=-50mA, Ib=0 DC Current Gain hFE(l) (Note) VCE=-5V, I C=-0.
5A Collector-Emitter Saturation Voltage hFE(2) v CE(sat) VC E=-5V, I C=-3A I C=-3A...



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