SILICON PNP TRANSISTOR - Toshiba
Description
:
2SB995
SILICON PIMP TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Breakdown Voltage : VCEq=-100V .
Low Collector-Emitter Saturation Voltage
: V C E(sat)=-2.
0V(Max.
) .
Complementary to 2SD1355 .
Recommended for 30W High-Fidelity Audio Frequency
Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO VEBO ic IB PC
Lstg
RATING -100 -100 -5 -5 -0.
5
UNIT
40
150
-55-150
1.
BASE 2.
COLLECTOR (HEAT SINK) a EMITTER
TOSHIBA
2-10K1A
Weight : 2.
1
ELECTRICAL CHARCTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
ICBO lEBO
...
Similar Datasheet
