SILICON PNP TRANSISTOR - Toshiba
Description
2SB994
SILICON PNP TRIPLE DIFFUSED TYPE
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES
.
Low Collector Saturation Voltage : VcE(sat)=-1.
0V(Max.
) at Ic=-3A, Ib=-0.
3A
.
Collector Power Dissipation : P C=30W (Tc=25°C) .
Complementary to 2SD1354
Unit in mm
: jl3ma^.
0&2±Q2
MAXIMUM RATINGS (Ta=25°C^> CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
VCBO VCEO v EBO ic
Base Current Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
IB
Storage Temper ature Range
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
ICBO lEBO v (BR)CE0
RATING -60 -60 -7
UNIT
-3
-0.
5 1.
5 30 150
-55-150
JEDEC
1.
BASE 2.
COLLECTOR (HEAT SINK) a EMITTER
EI AJ
TOSHIBA
2-10K1A
Weight : 2.
TEST CONDITION V C B=-60V, I E=0 VEB=-7V, IC=0
MIN.
-
TYP.
MAX.
- -100 - -100
UNIT mA dk
I c=-50mA, I B=0
-60 -
-
...
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