SILICON PNP TRANSISTOR - Toshiba
Description
2SB992
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Collector Current : Ic=-7A .
Low Collector Saturation Voltage
: V CE ( sat )=-0.
5V(Max.
) (at I C=-4A) .
High Collector Power Dissipation
: Pc=40W (at Tc=25°C) .
Complementary to 2SD1362
INDUSTRIAL APPLICATIONS Unit in mm
1CX3MAX.
03.
2±O.
2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Ta=25°C Tc=25 C
VCBO VcEO VEBO ic IB
PC
Junction Temperature
Storage Temperature Range
Lstg_
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING
-100 -80
-5 -7
UNIT
1.
5 40
150
-55-150
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
EI A.
TOSHIBA Weight : 2 0g
2-10K1A
CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
SYMBOL ICBO lEBO
TEST CONDITION VCB=-100V, I E=0 V EB=-5V, ...
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