SILICON PNP TRANSISTOR - Toshiba
Description
2SB833
SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES .
High Collector Current : Ic=-30A .
High DC Current Gain
: h FE ( 2 )=1000(Min.
) (V CE =-5V, I C =-20A) .
Monolithic Construction with Built-in Base-Emitter
Shunt Resistor.
Unit in mm
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO v EBO ic
lB_
?C
Ti
Tstg
RATING -80 -80 -5 -30 -1
UNIT
150
150
-65-150
1.
BASE 2.
EMITTER
COLLECTOR (CASE)
TO —
TOSHIBA
TC—3 , TB-3 2— 2 1A1
Mounting kit No.
AC73 Weight : 12.
9e
EQUIVALENT CIRCUIT
BASE O
o COLLECTOR
TOSHIBA CORPORATION
288-
2SB833
ELECTRICAL CHARACTERISTICS (Ta= 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown Voltage
SYMBOL ICBO IEBO
v (BR) CEO
TEST CONDITION VCB=-...
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