SILICON PNP TRANSISTOR - Toshiba
Description
2SB755
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown Voltage VCEO=-150V (Min.
) High Transition Frequency : f T=20MHz (Typ.
) Complementary to 2SD845.
Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Emitter Current Collector Power Dissipation „
I (Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO
RATING -150
v EBO IC
-5 -12
IE 12
PC 120 Ti 150
Tstg -55^,150
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
JEDEC
EIAJ TOSHIBA
2 — 34 A 1A
Weight : 10.
8g
ELECTRICAL CHARACTERISTICS (Ta=25 a C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
I CB0 lEBO v (BR) CEO
V (BR)EB0
VCB=-150V, I E=0 VEB=-5V, lc=0 IC=-0.
1A, Ib=0
I ...
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