SILICON PNP TRANSISTOR - Toshiba
Description
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
o
2SB753
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES:
High Collector Current : Iq=-7A Low Collector Saturation Voltage
: VcE(sat)=-0.
5V(Max.
) at I C =-4A High Collector Power Dissipation.
Complementary to 2SD843.
INDUSTRIAL APPLICATIONS Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL 'CBO 'CEO 'EBO
RATING -100 -80 -5
UNIT
Collector Current
ic -7
1.
BASE
Collector Power Dissipation
Ta=25°C Tc=25°C
PC
1.
5 40
2.
COLLECTOR (HEAT SINK) 3.
EMITTER
Junction Temperature
Ti 150
JEDEC EIAJ
Storage Temperature Range
stg -55^150 °C TOSHIBA
T0-220AB 2-10A1A
ELECTRICAL CHARACTERISTICS (Ta=25°p
CHARACTERISTIC
SYMBOL
Mounting Kit No.
AC75 Weight ; 1.
9g
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I CB0
Emitter Cut-off Current
I EB0
Collector-Emitter Breakdown Voltage
DC Current Gain
V (BR) ...
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