SILICON PNP TRANSISTOR - Toshiba
Description
:
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
15.
9MAX.
Unit in mm
03.
2±Q .
2
FEATURES • Complementary to 2SD716.
• Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage Collector Current
'EBO ic
Emitter Current
Collector Power DissipFation
~
.
(Tc=25°c:
Junction Temperature
PC
Storage Temperature Range
L stg
RATING -100 -100 -5
60 150 -55VL50
UNIT V
^W,s 4- °[ d =i
+ 0.
30
1.
0—0.
25
w
MM
5.
45 ±0.
2 5.
45±0.
2
n° —u
0?
^1
1
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
JEDEC
16 B 1A Weight : 4 .
6g
ELECTRICAL CHARACTERISTICS CHARACTERISTIC
(Ta=2< °C) SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
ICBO lEBO
VCB=-100V, I E=0 VEB=-5V, I C=0
Collector- Emitter Breakdown Voltage
V (BR) CEO I c=-50mA, I B=0
Emitter-Bas...
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