SILICON PNP TRANSISTOR - Toshiba
Description
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
2SB678
LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.
PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
gfe.
3 9 MAX.
45j2fe.
MAX.
FEATURES :
• High DC Current Gain hFE ( 2 )=1000(Min.
) (V CE=-2V, I C=-1A)
Low Saturation Voltage : VCE (sat)=-1.
5V(Max.
) (I C=-1A) Complementary to 2SD688.
jZfo.
45
05.
08
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Emitter Current
Collector Power Dissipation
(Ta = 25°C) (Tc = 25°C)
Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
SYMBOL VcBO
'CEO v EBO
IE
Tsts
RATING -100 -100 -10 -1.
5 1.
5 0.
8
175 -65M.
75
UNIT V
1.
EMITTER 2.
BASE 3.
COLLECTOR (CASE)
JEDEC
TO-39
TC-5, TB-5B TOSHIBA 2-8B1A
Weight : 1.
13g
BASE o
cI""
1—
ELECTRICAL CHARACTERISTICS (Ta = 25°c)
CHARACTERISTIC
Collector Cut-of...
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