SILICON PNP TRANSISTOR - Toshiba
Description
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES:
• High DC Current Gain
: h FE =2000 (Min.
) (vCE=-2V, I C=-1A) Low Saturation Voltage
VCE (satr-1 - 57
Max
(
->
(i c = - 2A)
INDUSTRIAL APPLICATIONS Unit in mm
10.
3MAX,, 03.
6±O.
2
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL VCBO VCEO VEBO
RATING I60
-40 -5
UNIT V
2.
54
2.
54
lO
8 dJ
13 3
><
4
Collector Current
Collector Power Dissipation ( tc=25 ° C )
Junction Temperature
Tj
-3 25 150
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
Storage Temperature Range EQUIVALENT CIRCUIT
Tst£
-55^150 COLLECTOR
BASEo-
=4.
8 kfTl
k=" 30012
""
TO 220 AB
EIAJ
46
TOSHIBA
Mounting Kit No.
AC75 Weight : 1.
9g
ELECTRICAL CHARACTERISTICS (Ta=25°c)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
Collector- Emitter Bre...
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