SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC2233
TV HOR I ZONTAL DEFLECT I ON OUTPUT APPL I CAT I ONS.
FEATURES: .
Large Collector Current Capability.
.
Large Collector Power Dissipation Capability.
Unit in mm
^10.
3MAX.
.
03.
63:0:2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic ICP
Base Current
IB
Collector Power Dissipation
Ta=25°C Tc=25°C
PC
Junction Temperature
T-i
Storage Temperature Range
stg
RATING 200 60
UNIT
10
1.
5 40
150 -55-150
W
"°C °c
1.
5MAX.
Q76
2.
5 4
2.
5 4
in
o 1 23
.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
TO—2 20AB
TOSHIBA
2-10A1A
Weight :l-9g Mounting kit No.
AC75
ELECTRICAL CHARACTERISTICS (Ta=25°C;
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
lEBO
DC Current Gain
hPE(l) hpE(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VcE(sat) VBE(sat...
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