SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : .
Output Power : P o =40W (Min.
)
( f=175MHz, VCC =13.
5V, P-j=10W ) .
100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ Vcc=13.
5V, Pi=10W, f=175MHz
2-J2fc.
2±Ql
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic PC
L stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
ICBO V(BR)CB0
Collector-Emitter Breakdwon
Voltage
v (BR) CEO
Emitter-Base Breakdown Voltage
v (BR)EB0
DC Current Gain
hFE
Collector Output Capacitance Cob
Output Power
Po
Power Gain
Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance
Gpe
r'c
Zin
ZOUT
RATING 35 18
3.
5 10
70
175
-65-175
UN...
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