SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : .
Output Power : Po=2.
8W (Min.
)
( f=175MHz, VCC=13.
5V, Pi=0.
15W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCc=13.
5V, P Q =4W, f=175MHz
0&39MAX.
08.
5MAX,
Unit in mm
^0.
4 5
2 6 MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO VeBO ic PC
stg
RATING 35 17
3.
5 0.
8
7.
5
175
-65-175
UNIT
1.
EMITTER CCASE) 2.
BASE 3.
COLLECTOR
°C TOSHIBA
2-9A1B
Weight : 3.
7g
ELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
JCBO V(BR)CB0 v (BR) CEO
V CB=15V, I E=0 I C =lmA, I E=0 IC=5mA, Ib=0
Emitter-Base Breakdown Voltage
v (BR)EB0 I E=lmA, lc=0
DC Current Gain
hFE ...
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