SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P =6W(Min.
)
(f =4 70MHz, V C c=12.
6V, P 1 =1W) .
100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V CC=12.
6V, P =6.
5W, f=470MHz
Unit in nun
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C)
v CBO VCEO v EBO ic
35 17 3.
5 1.
4
15
1.
EMITTER 2.
BASE a EMITTER 4.
COLLECTOR
Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25°C)
175
-65-175
°C
TOSHIBA
2-10G1A
Weight : 3.
3g Mounting Kit No.
AC57
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector-Base Breakdown Voltage
ICBO v (BR)CB0
V CB=15V, I E=0 I c =2mA, I E =0
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
v (BR) CEO I c=10mA, I B=0 v (BR)EB0 I E=0.
2mA, lc=0
DC Current Gain Collector Ou...
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