SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : .
Output Power : P =27W (Min.
)
(f=175MHz, VC C=12.
5V, Pi=4.
2W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.
5V, Pi=4W, f=175MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
'CBO
40
Collector-Emitter Voltage
VCEO
18
Emitter-Base Voltage
Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
VEBO ic PC
Ti
4.
0 6.
0
50 175
1.
EMITTER 2.
BASE a EMITTER 4.
COLLECTOR
Storage Temperature Range
-stg
-65-175
TOSHIBA
2— 10G1A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Mounting Kit No.
AC57 Weight : 3.
3g
CHARACTERISTIC
Collector Cut-off Current Collector-Base Breakdown Voltage
SYMBOL iCBO
TEST CONDITION V CB=15V, I E=0
v (BR) CBO I c=10mA, Ie=0
MIN.
TYP.
MAX.
- - 1.
0
40 -
-
Collector-Emitter Breakdown Voltage
v (BR) CEO I c =25mA, Ib=0
18 -
-
Emitter -Base Breakdown Voltage DC...
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