|
Part Number
|
2SC2102 |
|
Manufacturer
|
Toshiba |
|
Description
|
SILICON NPN TRANSISTOR |
|
Datasheet
|
 2SC2102 PDF File
|
Overview
1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : .
Output Power : Po=15W (Min.
)
( f=l 75MHz, Vcc=12.
5V, Pi=1.
3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30; 1 VSWR @ Vcc=15V, Pi= 1.
3W, f=175MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VcBO
35
Collector-Emitter Voltage
VCEO
18
Emitter-Base Voltage Collector Current
Collector Power Dissipation (Tc=25°C)
v EBO ic
PC
3.
5 3.
5
35
1.
EMITTER 2.
BASE 3.
EMITTER 4.
COLLECTOR
Junction Temperature
175
Storage Temperature Range
T stg -65-175 °C TOSHIBA
2-10G1A
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
Mounting Kit No.
AC57 Weight : 3 .
3g
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
Collector-Base Breakdown Voltage
ICBO
V CB=15V, I E=0
v (BR)CB0 IC=10mA, Ie=0
- - 1.
0 mA 35 - - V
Collector-Emitter Breakdown Voltage
V (BR) CEO I c =25mA, I B=0
18 - - V
Emitter-Base Br...
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