SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
2SC2098
CITIZEN BAND AND HAM BAND UP TO 50MHz RF POWER AMPLIFIER APPLICATIONS.
(LOW SUPPLY VOLTAGE USE)
FEATURES .
Recommended for 12W(PEP) SSB Citizen Band
Transceiver Applications.
.
High Power Gain : Gpe=11.
8dB(Typ.
) @ f=28MHz .
Designed to Withstand Load Mismatch at All Phase
Angles with Infinite VSWR at 17 Volts.
Unit in mm
10.
3 MAX, ffa6:r0.
2
MAXIMUM RATINGS (Ta=25 °C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
(R EB =10n) Emitter-Base Voltage
Collector Current
Emitter Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCER
Vebo ic IE PC
Tj T stg
RATING
70 70
4 6 -6
20
150
-55-150
UNIT
V
V
V 1.
BASE
A 2.
COLLECTOR (HEAT SINK) A 3.
EMITTER
TO— 220AB W
TOSHIBA °C Weight : 1.
9g
°c
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vo...
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