SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
2SC1955
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES •
.
Output Power : Po=2.
8W (Min.
) ( f=175MHz, VCC =13.
5V, Pi=0.
15W)
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VC C=13.
5V, P =4W, f=175MHz
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25 °C) Junction Temperature Storage Temperature Range
SYMBOL v CB0 VCEO Vebo ic
?C T
J
T stg
RATING
35 17 3.
5 0.
8
7.
5
175
-65 ~175
UNIT V V V A W
°C °C
Unit in mm
J^9.
Z9lllAX.
0'a45MAX 1
1
00.
A 5 1
0&O8
c5
-
s
to
«5
-
M s
03
H
? EMITTER (CASE) 2.
BASE 3.
COLLECTOR
JEDEC
TO— 39
EIAJ
TC— 5.
TB-5B
TOSHIBA
2-8B1B
Weight 1.
2s
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Voltage
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
!CB0 v (BR)CB0 v (BR) CEO
V...
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