SILICON NPN TRANSISTOR - Toshiba
Description
:)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES .
Output Power : P =2.
8W(Min.
(f=470MHz, Vcc=12.
6V, Pi=0.
6W) .
100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ VC c=12.
6V, Pi=0.
6W, f=470MHz
pa 39 MAX.
0R5MAX,
Unit in mm
—I i
M1 !
'
00.
45
a
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO v CE0 v EB0 ic
PC
Ti
T stg
RATING 35 17
3.
5 0.
8
UNIT
7.
5
175
-65-175
°C °C
1.
EMITTER ^CASE^ 2.
BASE 3.
COLLECTOR
TOSHIBA
TC-17 TB-22C .
Weight : 3.
7g
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
v (BR)CB0 v (BR) CEO
Emitter-Base Breakdown Voltage
v (BR)EB0
DC Current Gain Collector Output Capacitance
n FE Cob
Output ...
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