SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS.
(20V SUPPLY VOLTAGE USE)
FEATURES Specified 28V, 28MHz Characteristics Output Power : P o =80Wp Ep Minimum Gain : Gp e=14.
5dB Efficiency : ? c=40%(Min.
Intermodulation Distortion : IMD=-30dB(Max.
Unit in mm
MAXIMUM RATI NGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO Vebo ic
PC
T
j
Tstg
RATING 65
35 4
12
140
175
-65 -175
UNIT V V V A
W
°C °c
1.
EMITTER 2.
BASE 3.
EMITTER 4.
COLLECTOR
TOSHIBA
2-13B1A
Weight : 5.
2g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
v (BR) CEO V (BR)CER V (BR)EB0
DC Current Gain Transition Frequency Collector Output Capacitance
h FE fT Cob
Power Gain
Gpe
Input Power
Pi
...
Similar Datasheet
