SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=80V Complementary to 2SA816.
Unit in mm
10. 3 MAX 0Z. 6 ±0. 2
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RAINGS
VCBO v CEO Vebo ic IE PC
T. 1
Tste
80 80
5
750 -750
1. 5 150 -55M. 50
UNIT
V V V mA mA W °C °C
1. BASE Z. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC
TO -230AB
EIAJ TOSHIBA
SC -46
2-10A1A
Mounting Kit NO. AC75 Weight : 1 . 9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Breakdown Voltage
CollectorEmitter
EmitterBase
DC Current Gain
SYMBOL ICBO I EB0
v (BR) CEO
V (BR)EB0 h FE(l) (Note) h FE(2)
TEST CONDITION VCB=30V, IE=0 VEB=5V, I C=0 I C=10mA, Ib=0 I E=0. 1mA, lc=0
VcE...
2SC1626 PDF File
