SILICON NPN TRANSISTOR - Toshiba
Description
:
SILICON NPN EPITAXIAL PLANAR TYPE
2SC1199
HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS.
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES
.
Low Noise for High and Low Frequency
: NF=4 .
OdB (Max .
) : NF=lldB (Max.
)
f=200MHz f=10kHz
Unit in mm
09.
S9MAX.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Collector Power Dissipation
Junction Temperature Storage Temperature Range
SYMBOL v CBO VCEO VEBO ic
PC
Tj T stg
RATING 50 35
3
300
UNIT V V V
mA
600 mW
150 -65 ~150
°C °C
1.
EMITTER 2.
BASE & colljv-or
4.
Ck:'i
7
.
TC-5, TI TOSHIBA 2-8DIA
Weight : 1.
2g
ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
I CB0 V(BR)CB0 v (BR) CEO
V(BR)EB0 hFE
Transition Frequency Collector Output Capacitance
fT Cob
Noise Figure
NF(1)...
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