SILICON NPN TRANSISTOR - Toshiba
Description
SILICON NPN EPITAXIAL PLANAR TYPE
2SC1164
HIGH POWER AMPLIFIER FOR CATV APPLICATIONS.
Unit in mm
09.
39MAX.
FEATURES .
Wide Band and High Gain for Class A Amplifier.
7- 8.
45MAX X1
<
]haracteristics
.
All Electrodes Insulated frc m Case.
00.
4 5
s
o5
1
^5.
0 8
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO v EBO
ic PC T
J
T stg
RATING UNIT 50 V 35 V 3V
300 mA 600 mW 150 °C -55 -150 °C
'? ~?>s
A 3\
4t\A \\^^\Vs%H\y
O-/
JEDEC EIAJ TOSHIBA
i- EMITTER 2.
BASE 3.
COLLECTOR 4.
CASE
TO-33
TC-5, TB-14B
2-8D1A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Weight : 1.
2g
CHARACTERISTIC
Collector Cut-off Current
Collector-Emitter Breakdwon Voltage
SYMBOL ICBO
TEST CONDITION V CB=20V, I E=0
v (BR)CE0 I C =5mA, I B =0
MIN.
TYP.
MAX.
UNIT - - 0.
3 MA
35 -
-
V
DC Current Gain
hFE (Note)
V C E=10V, Ic=50mA
25 ...
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