SILICON NPN TRANSISTOR - Toshiba
Description
:)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS
FEATURES .
Output Power : P =l.
2W(Min.
(f=470MHz, VCC=12.
6V, I»i=0.
3W)
Unit in mm
09.
39 MAX.
8.
4 5 MAX r -j
13
Xr < ar^ d to
- «j
MAXIMUM RATINGS (Ta=25°C)
00.
45
j
05.
08
ao
0$
H
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO v EBO ic PC
T
J
Tstg
RATING 40 20
4
0.
5
5
175 -65 -175
UNIT V V V A W
°C °c
[\ 3
^I
l^jL JJ
45A /% V^
°/ 1.
EMITTER ( CASE) 2.
BASE 3.
COLLECTOR
JEDEC
TO - 39
EIAJ
TO - 5 , TB - 5B
TOSHIBA
2 - 8B1B
Weight : 1.
2g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current Collector-Base Breakdown Voltage
SYMBOL
TEST CONDITION
TCBO
V CB =15V, I E=0
v (BR)CB0 I C =lmA, I E=0
MIN.
-
40
TYP.
-
-
MAX.
UNIT 1 yA
-V
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
v (B...
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