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2SC506

Toshiba
Part Number 2SC506
Manufacturer Toshiba
Description SILICON NPN TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS....
Datasheet PDF File 2SC506 PDF File

2SC506
2SC506

Overview
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.
39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range V CEO v EBO ic IB pC T i Tstg 300 V 200 3V 1.
EMITTER 2.
BASE 200 mA 3.
COLLECTOR (CASE) 50 mA JEDEC 600 mW TO-39 175 °C TC-5, TB-5B -65M.
75 °C TOSHIBA EL...


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