Power Transistors
Description
File No.
822 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OO(]5LlD
Solid State Division
Power Transistors
RCIP1 'II 'II , RCP113, RCP115, IRCIP1I17 Series
H·1824
Features:
CI Low Miller feedback capacitance: Cb'c = 2.
25 pF max.
CI Thermal-cycling ratings e Maximum safe-area-of-operation
curves " High gain-bandwidth product:
fT = 80 MHz typo
IHUgh-Voltage, Medium-Power Silicon N-P-N Power Transistors
For TV Video Output and Linear-Amplifier Applications
~VCEO (V)
50-300
350 RCPll10 300 RCPlllC 250 RCPll1B 200 RCplllA 100 -
At VCE = 10 V.
IC =_25 rnA
30-150
50 min.
20 min.
RCP113D RCP113C RCP113B RCP113A
-
-
RCPl15B
-
RCP115
-
RCP117B
-
RCP117
Note: Characteristics charts for individual device types show hFE measured at additional current levels.
The RCP111·.
RCPI13-.
RCPI15·.
and RCPl17-series power transistors are double-diffused, epitaxial-collector silic;on n-p-n transistors with planar junctions and field-shield construction.
These transistors ar...
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